电感耦合等离子体发射光谱法测定镍铜合金中高含量硅

Determination of High Concentration Si in Ni-Cu Alloy by ICP-AES

摘要: 采用电感耦合等离子体发射光谱（ICP-AES）法对镍铜合金中高含量硅进行了测定.方法对样品的溶解和仪器测量条件以及共存元素干扰进行了系统的研究，选定了仪器的最佳测定条件，硅分析线为251.611 nm，内标元素线为371.029 nm.样品以硝酸为主加盐酸溶解，加氢氟酸控制温度溶解硅，在仪器最佳条件进行测量,并与经典化学法（重量法）结果对照一致.硅元素含量在1%~ 5%范围回收率为99%~102%,RSD为0.77%.

Abstract: A method for the determination of Si in Ni-Cu alloys by ICP-AES is introduced. A systemetic study on the dissolution of the sample, the apparatus parameters has been carried out, and the optimized conditions were obtained. The analytical line used was Si 251.611 nm, and internal standard element line Y 371.029 nm. The sample dissolve in nitric acid plus hydrchloric acid, hydrogen fluoride was added to and that control the temperature.The results were consistent with those of the chemical method(Gravimetric). The recovery of the sample was 99% to 102% and the RSD was 0.77%.