半绝缘砷化镓单晶中AB微缺陷的定量测量方法

A Quantitative Method of AB Microscopic Defects in Semi-insulating GaAs Single Crystals

摘要: 报道了非掺杂半绝缘砷化镓单晶中AB微缺陷显微特征的研究结果,提出了一种自动定量测量微缺陷的方法,并在WD-5图象处理分析系统中实现了该算法。

Abstract: The microscopic characteristics of AB microdefects in LEC undoped semi-insulating GaAs single crystals have been studied. A new method for auto mesurement of microdefects is proposed and realized by WD-5 image processing and analysis system.