Abstract: After having a full understanding of the working principles of every parts of the Varian 300XP ion implanter, the 500 W current source and 450 W arcing power supply were upgraded to the 1 500 W current source and 1 500 W arcing power supply, and integrated into the original ion source power supply system. The existing unstable gas flow, ion source power supply, analyzer, source magnetic field and high voltage plastic optical fiber isolation control circuit were upgraded to the multi-channel optical fiber isolation communication system. A 10 cm sample injection terminal was transformed into a 15 cm sample chuck, and an independent dose monitoring system was developed. After reconstruction, the maximum beam current of boron was more than 150 μA and adjustable. The inhomogeneity of resistance between and in the 15 cm wafers was less than 3.5%. Boron doped monocrystal silicon structure layer was prepared by the strong beam current boron ion implantation and applied to the micro-electro-mechanical systems pressure sensor, thermoelectric device and nano-resonator device.